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November 9, 2024 Allura Alforsdotter Visited 37 times , 2 Visits today

Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

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Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

By [email protected] (Wayne Williams)

Samsung plans record-breaking 400-layer V10 NAND chip according to new report …read more

Source:: techradar.com – Gadgets

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